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Volumn 60, Issue 24, 1999, Pages 16686-16700

Influence of the backward-pump process on photon-number squeezing in a constant-current-driven heterojunction led: transition from thermionic emission to diffusion limits

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EID: 0001603820     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.60.16686     Document Type: Article
Times cited : (15)

References (42)
  • 30
    • 85037880286 scopus 로고    scopus 로고
    • For instance, H. C. Casey, Jr. and M. B. Panish, Heterostructure Lasers (Academic Press, New York, 1978), Pt. A, Chap. 3, p. 161.
    • For instance, H. C. Casey, Jr. and M. B. Panish, Heterostructure Lasers (Academic Press, New York, 1978), Pt. A, Chap. 3, p. 161.
  • 32
    • 85037878887 scopus 로고    scopus 로고
    • For instance, H. Kressel and J. K. Butler, Semiconductor Lasers and Heterojunction LEDs (Academic Press, New York, 1977), Chap. 2, p. 56.
    • For instance, H. Kressel and J. K. Butler, Semiconductor Lasers and Heterojunction LEDs (Academic Press, New York, 1977), Chap. 2, p. 56.
  • 34
    • 85037892909 scopus 로고    scopus 로고
    • Hitachi Optodevice Data Book (Hitachi Co., Tokyo, 1996) (in Japanese).
    • Hitachi Optodevice Data Book (Hitachi Co., Tokyo, 1996) (in Japanese).
  • 35
    • 85037913931 scopus 로고    scopus 로고
    • In Ref. 25, the internal series resistance at room temperature of the same type LED as ours was assigned to be, for instance, (Formula presented) for the acceptor concentration, (Formula presented) and the thickness (Formula presented) of the p-type wide-band-gap layer. However, in the reference, the resistances were fitted by an empirical design curve, (Formula presented) which is quite unphysical. The resistance should, in general, be inversely proportional to (Formula presented) and t. Probably, different growth conditions used to obtain different (Formula presented) and t values lead to different n-side barrier heights (Formula presented) through different grading layer thicknesses and, in turn, different BP rates (see Appendix B).
    • In Ref. 25, the internal series resistance at room temperature of the same type LED as ours was assigned to be, for instance, (Formula presented) for the acceptor concentration, (Formula presented) and the thickness (Formula presented) of the p-type wide-band-gap layer. However, in the reference, the resistances were fitted by an empirical design curve, (Formula presented) which is quite unphysical. The resistance should, in general, be inversely proportional to (Formula presented) and t. Probably, different growth conditions used to obtain different (Formula presented) and t values lead to different n-side barrier heights (Formula presented) through different grading layer thicknesses and, in turn, different BP rates (see Appendix B).
  • 38
    • 85037889507 scopus 로고    scopus 로고
    • For instance, W. W. Chow, S. W. Koch, and M. Sargent III, Semiconductor-Laser Physics (Springer-Verlag, Berlin, 1994), Chap. 9, pp. 345–348.
    • For instance, W. W. Chow, S. W. Koch, and M. Sargent III, Semiconductor-Laser Physics (Springer-Verlag, Berlin, 1994), Chap. 9, pp. 345–348.
  • 40
    • 85037874266 scopus 로고    scopus 로고
    • See for instance, H. C. Casey, Jr. and M. B. Panish, Heterostructure Lasers (Ref. 27), Chap. 4, p. 193.
    • See for instance, H. C. Casey, Jr. and M. B. Panish, Heterostructure Lasers (Ref. 27), Chap. 4, p. 193.
  • 42
    • 85037890875 scopus 로고    scopus 로고
    • See for instance, H. C. Casey, Jr. and M. B. Panish, Heterostructure Lasers (Ref. 27), Chap. 4, pp. 231–235.
    • See for instance, H. C. Casey, Jr. and M. B. Panish, Heterostructure Lasers (Ref. 27), Chap. 4, pp. 231–235.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.