-
10
-
-
0031251374
-
-
G. Shinozaki, T. Hirano, T. Kuga, and M. Yamanishi, Jpn. J. Appl. Phys., Part 1 36, 6350 (1997).
-
(1997)
Jpn. J. Appl. Phys., Part 1
, vol.36
, pp. 6350
-
-
Shinozaki, G.1
Hirano, T.2
Kuga, T.3
Yamanishi, M.4
-
11
-
-
0031164061
-
-
J. Abe, G. Shinozaki, T. Hirano, T. Kuga, and M. Yamanishi, J. Opt. Soc. Am. B 14, 1295 (1997).
-
(1997)
J. Opt. Soc. Am. B
, vol.14
, pp. 1295
-
-
Abe, J.1
Shinozaki, G.2
Hirano, T.3
Kuga, T.4
Yamanishi, M.5
-
12
-
-
0031647893
-
-
M. Kobayashi, M. Kohno, Y. Kadoya, M. Yamanishi, J. Abe, and T. Hirano, Appl. Phys. Lett. 72, 284 (1998).
-
(1998)
Appl. Phys. Lett.
, vol.72
, pp. 284
-
-
Kobayashi, M.1
Kohno, M.2
Kadoya, Y.3
Yamanishi, M.4
Abe, J.5
Hirano, T.6
-
16
-
-
0027189196
-
-
E. Goobar, A. Karlsson, G. Björk, and P. J. Rigole, Phys. Rev. Lett. 70, 437 (1993).
-
(1993)
Phys. Rev. Lett.
, vol.70
, pp. 437
-
-
Goobar, E.1
Karlsson, A.2
Björk, G.3
Rigole, P.J.4
-
17
-
-
0029362444
-
-
Y-Q. Li, P. J. Edwards, P. Lynam, and W. N. Cheung, Int. J. Optoelectron. 10, 417 (1995).
-
(1995)
Int. J. Optoelectron.
, vol.10
, pp. 417
-
-
Edwards, P.J.1
Lynam, P.2
Cheung, W.N.3
-
18
-
-
4244139753
-
-
M. Yamanishi, K. Watanabe, N. Jikutani, and M. Ueda, Phys. Rev. Lett. 76, 3432 (1996).
-
(1996)
Phys. Rev. Lett.
, vol.76
, pp. 3432
-
-
Yamanishi, M.1
Watanabe, K.2
Jikutani, N.3
Ueda, M.4
-
28
-
-
0019554783
-
-
K. Kurata, Y. Ono, K. Ito, M. Mori, and H. Sano, IEEE Trans. Electron Devices ED-28, 374 (1981).
-
(1981)
IEEE Trans. Electron Devices
, vol.ED-28
, pp. 374
-
-
Kurata, K.1
Ono, Y.2
Ito, K.3
Mori, M.4
Sano, H.5
-
30
-
-
85037880286
-
-
For instance, H. C. Casey, Jr. and M. B. Panish, Heterostructure Lasers (Academic Press, New York, 1978), Pt. A, Chap. 3, p. 161.
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For instance, H. C. Casey, Jr. and M. B. Panish, Heterostructure Lasers (Academic Press, New York, 1978), Pt. A, Chap. 3, p. 161.
-
-
-
-
32
-
-
85037878887
-
-
For instance, H. Kressel and J. K. Butler, Semiconductor Lasers and Heterojunction LEDs (Academic Press, New York, 1977), Chap. 2, p. 56.
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For instance, H. Kressel and J. K. Butler, Semiconductor Lasers and Heterojunction LEDs (Academic Press, New York, 1977), Chap. 2, p. 56.
-
-
-
-
33
-
-
0018520083
-
-
S. Zukotynski, S. Sumski, M. B. Panish, and H. C. Casey, Jr., J. Appl. Phys. 50, 5795 (1979).
-
(1979)
J. Appl. Phys.
, vol.50
, pp. 5795
-
-
Zukotynski, S.1
Sumski, S.2
Panish, M.B.3
Casey, H.C.4
-
34
-
-
85037892909
-
-
Hitachi Optodevice Data Book (Hitachi Co., Tokyo, 1996) (in Japanese).
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Hitachi Optodevice Data Book (Hitachi Co., Tokyo, 1996) (in Japanese).
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-
-
-
35
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85037913931
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In Ref. 25, the internal series resistance at room temperature of the same type LED as ours was assigned to be, for instance, (Formula presented) for the acceptor concentration, (Formula presented) and the thickness (Formula presented) of the p-type wide-band-gap layer. However, in the reference, the resistances were fitted by an empirical design curve, (Formula presented) which is quite unphysical. The resistance should, in general, be inversely proportional to (Formula presented) and t. Probably, different growth conditions used to obtain different (Formula presented) and t values lead to different n-side barrier heights (Formula presented) through different grading layer thicknesses and, in turn, different BP rates (see Appendix B).
-
In Ref. 25, the internal series resistance at room temperature of the same type LED as ours was assigned to be, for instance, (Formula presented) for the acceptor concentration, (Formula presented) and the thickness (Formula presented) of the p-type wide-band-gap layer. However, in the reference, the resistances were fitted by an empirical design curve, (Formula presented) which is quite unphysical. The resistance should, in general, be inversely proportional to (Formula presented) and t. Probably, different growth conditions used to obtain different (Formula presented) and t values lead to different n-side barrier heights (Formula presented) through different grading layer thicknesses and, in turn, different BP rates (see Appendix B).
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38
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85037889507
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For instance, W. W. Chow, S. W. Koch, and M. Sargent III, Semiconductor-Laser Physics (Springer-Verlag, Berlin, 1994), Chap. 9, pp. 345–348.
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For instance, W. W. Chow, S. W. Koch, and M. Sargent III, Semiconductor-Laser Physics (Springer-Verlag, Berlin, 1994), Chap. 9, pp. 345–348.
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-
-
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40
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85037874266
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See for instance, H. C. Casey, Jr. and M. B. Panish, Heterostructure Lasers (Ref. 27), Chap. 4, p. 193.
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See for instance, H. C. Casey, Jr. and M. B. Panish, Heterostructure Lasers (Ref. 27), Chap. 4, p. 193.
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-
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42
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85037890875
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See for instance, H. C. Casey, Jr. and M. B. Panish, Heterostructure Lasers (Ref. 27), Chap. 4, pp. 231–235.
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See for instance, H. C. Casey, Jr. and M. B. Panish, Heterostructure Lasers (Ref. 27), Chap. 4, pp. 231–235.
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