Transverse-Junction-Stripe GaAs-AlGaAs Lasers for Squeezed Light Generation

IEEE Journal of Quantum Electronics

Volumn 35, Issue 3, 1999, Pages 387-394

  Lathi, S ^a   Tanaka, K ^b   Morita, T ^b   Inoue, S ^c   Kan, H ^b   Yamamoto, Y ^a,d  

^a STANFORD UNIVERSITY   (United States)

^b CENTRAL RESEARCH LABORATORY   (Japan)

^c NIHON UNIVERSITY   (Japan)

^d Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

Amplitude squeezed light; DX centers and intensity noise of laser; Saturable absorption in TJS lasers; Semiconductor lasers; Subshot noise light; TSJ lasers

Indexed keywords

ACOUSTIC NOISE; LIGHT ABSORPTION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; QUANTUM OPTICS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

AMPLITUDE-SQUEEZED LIGHT; SUBSHOT-NOISE LIGHT; TRANSVERSE-JUNCTION-STRIPE (TJS) LASERS;

SEMICONDUCTOR LASERS;

EID: 0033096946     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.748845     Document Type: Article

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