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Volumn 15, Issue 11, 1998, Pages 837-839

Photoluminescence properties of a-SiC:H films grown by plasma enhanced chemical vapor deposition from SiH4+C2H2 gas mixtures

(6) Liu, Yi Chun a Liu, Chun Guang a Chen, Da Wei a,b Liu, Yu Xue a Bai, Yu Bai b Li, Tie Jin b

a NORTHEAST NORMAL UNIVERSITY (China)

b JILIN UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; CARBON FILMS; DEFECT DENSITY; PHOTOLUMINESCENCE; PLASMA CVD; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON CARBIDE;

A-SI:H; A-SIC:H; CARBON CONTENT; DEFECT STATES DENSITY; DEFECTS DENSITY; DISSOCIATION ENERGIES; GASES MIXTURE; PHOTOLUMINESCENCE INTENSITIES; PHOTOLUMINESCENCE PROPERTIES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION SYSTEMS;

GAS MIXTURES;

EID: 0032265524 PISSN: 0256307X EISSN: None Source Type: Journal
DOI: 10.1088/0256-307X/15/11/020 Document Type: Article

Times cited : (2)

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