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Volumn 45, Issue 8, 2000, Pages 1032-1041
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Special features of the growth of hydrogenated amorphous silicon in PECVD reactors
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Author keywords
[No Author keywords available]
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Indexed keywords
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EID: 0034338677
PISSN: 10637842
EISSN: None
Source Type: Journal
DOI: 10.1134/1.1307013 Document Type: Article |
Times cited : (9)
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References (13)
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