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Volumn 45, Issue 8, 2000, Pages 1032-1041

Special features of the growth of hydrogenated amorphous silicon in PECVD reactors

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[No Author keywords available]

Indexed keywords


EID: 0034338677     PISSN: 10637842     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1307013     Document Type: Article
Times cited : (9)

References (13)
  • 2
    • 0006222148 scopus 로고
    • O. A. Golikova, Fiz. Tekh. Poluprovodn. (Leningrad) 25, 1517 (1991) [Sov. Phys. Semicond. 25, 915 (1991)].
    • (1991) Sov. Phys. Semicond. , vol.25 , pp. 915
  • 5
    • 0001830549 scopus 로고    scopus 로고
    • Yu. E. Gorbachev, M. A. Zatevakhin, and I. D. Kaganovich, Zh. Tekh. Fiz. 66 (12), 89 (1996) [Tech. Phys. 41, 1247 (1996)].
    • (1996) Tech. Phys. , vol.41 , pp. 1247


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.