Influence of thermal stress on I-V characteristics and low frequency noise of AlGaInP UHB-LEDs

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1998, Pages 741-744

  Berntgen, J ^a   Lieske, T ^a   Schineller, B ^a   Deufel, M ^a   Heuken, M ^a   Juergensen, H ^a   Heime, K ^a  

^a RWTH AACHEN UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AGING OF MATERIALS; DEGRADATION; DIFFUSION; DISLOCATIONS (CRYSTALS); ELECTRIC CURRENTS; FABRICATION; HETEROJUNCTIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DOPING; THERMAL STRESS;

DIRECTIONAL DIFFUSION; LOW FREQUENCY NOISE;

LIGHT EMITTING DIODES;

EID: 0032287517     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)