Comparison of npn and pnp profile design tradeoffs for complementary SiGe HBT Technology

Solid-State Electronics

Volumn 44, Issue 11, 2000, Pages 1949-1954

  Zhang, Gang ^a   Cressler, John D ^a   Niu, Guofu ^a   Pinto, Angelo ^b  

^a AUBURN UNIVERSITY   (United States)

^b Texas Instruments Deutschland GmbH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CONSTRAINT THEORY; ELECTRIC SPACE CHARGE; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON COMPOUNDS;

COLLECTOR-BASE SPACE CHARGE REGIONS; PARASITIC ENERGY BAND BARRIERS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0034324422     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(00)00165-9     Document Type: Article

References (9)

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