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Volumn 36, Issue 23, 2000, Pages 1944-1946

Demonstration of high robustness to SNR impairment in 20 Gbit/s long-haul transmission using 1.5 μm saturable absorber

Author keywords

[No Author keywords available]

Indexed keywords

BIT ERROR RATE; ION BOMBARDMENT; SEMICONDUCTOR QUANTUM WELLS; SIGNAL TO NOISE RATIO;

EID: 0034322077     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20001356     Document Type: Article
Times cited : (10)

References (6)
  • 3
    • 0034273595 scopus 로고    scopus 로고
    • System application of 1.5μm ultrafast saturable absorber in 10Gbit/s long-haul transmission
    • MANGENEY, J., BARRÉ, S., AUBIN, G., OUDAR, I.-L., and LECLERC, O.: 'System application of 1.5μm ultrafast saturable absorber in 10Gbit/s long-haul transmission', Electron. Lett., 2000, 36, (20), pp. 1725-1727
    • (2000) Electron. Lett. , vol.36 , Issue.20 , pp. 1725-1727
    • Mangeney, J.1    Barré, S.2    Aubin, G.3    Oudar, I.-L.4    Leclerc, O.5
  • 6
    • 0010033346 scopus 로고    scopus 로고
    • Intensity-invariant sub-picosecond saturable absorption in heavy-ion irradiated bulk GaAs
    • STELMAKH, N., MANGENEY, J., ALEXANDROU, A., and PORTNOI, E.L.: 'Intensity-invariant sub-picosecond saturable absorption in heavy-ion irradiated bulk GaAs', Appl. Phys. Lett., 1998, 73, pp. 3715-3717
    • (1998) Appl. Phys. Lett. , vol.73 , pp. 3715-3717
    • Stelmakh, N.1    Mangeney, J.2    Alexandrou, A.3    Portnoi, E.L.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.