Study of grass formation in GaAs backside via etching using inductively coupled plasma system

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 6, 2000, Pages 2780-2784

  Nam, P S ^a   Ferreira, L M ^a   Lee, T Y ^b   Tu, K N ^b  

^a NORTHROP GRUMMAN CORPORATION   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; ION BOMBARDMENT; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; PLASMA SOURCES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SURFACE STRUCTURE;

GRASS FORMATION; INDUCTIVELY COUPLED PLASMA (ICP) SYSTEMS;

PLASMA ETCHING;

EID: 0034318190     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1320803     Document Type: Article

References (8)

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