Process and device characteristics of self-assembled metal nano-crystal EEPROM

Superlattices and Microstructures

Volumn 28, Issue 5-6, 2000, Pages 393-399

  Liu, Zengtao ^a   Kim, Myongseob ^a   Narayanan, Venkat ^a   Kan, Edwin C ^a  

^a Cornell University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; COULOMB BLOCKADE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TUNNELING; GOLD; HOT CARRIERS; MICROSCOPIC EXAMINATION; NANOSTRUCTURED MATERIALS; SELF ASSEMBLY; SEMICONDUCTING SILICON; THRESHOLD VOLTAGE; TUNGSTEN;

ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY; GATE CURRENT INJECTION; GATE TUNNELING OXIDES; PROCESS INTEGRATION;

PROM;

EID: 0034316564     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1006/spmi.2000.0939     Document Type: Article

References (11)

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