Effect of Ar+ ion bombardment during hydrogenated amorphous silicon film growth in plasma chemical vapor deposition system

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 11, 2000, Pages 6404-6409

  Kato, Isamu ^a   Nakano, Yuuki ^a   Yamaguchi, Nobuhiko ^a  

^a WASEDA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ARGON; ELECTRIC POTENTIAL; HYDROGENATION; ION BOMBARDMENT; ION IMPLANTATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POSITIVE IONS; SURFACES; THERMAL EFFECTS;

MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION (MPCVD) SYSTEM;

FILM GROWTH;

EID: 0034315967     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.6404     Document Type: Article

References (7)

1. S. Kaushal, V. Dalal and J. Xu: J. Non-Cryst. Solids 198-200 (1996) 563.
2. W. M. M. Kessels, C. M. Leewis, M. C. M. van de Sanden and D. C. Schram: J. Appl. Phys. 86 (1999) 4029.
3. I. Kato, S. Wakana, S. Hara and H. Kezuka: Jpn. J. Appl. Phys. 21 (1982) 470.
4. I. Kato, S. Wakana and S. Hara: Jpn. J. Appl. Phys. 22 (1983) 40.
5. K. Noguchi, K. Ebashi and I. Kato: Proc. 3rd Symp. Plasma Processing (1986) p. 155.
6. I. Kato, T. Usui and T. Sakamoto: Trans. IEE Jpn. A 112 (1992) 355 [in Japanese].
7. K. Kato and I. Kato: Proc. 9th Symp. Plasma Processing (1992) p. 91.