Step rearrangement on Si(001) surface during diborane exposure

Surface Science

Volumn 468, Issue 1-3, 2000, Pages 85-91

  Fujita, Ken ^a   Ichikawa, Masakazu ^a  

^a JT RES CENTER FOR ATOM TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING BORON; SINGLE CRYSTALS;

STEP FORMATION-BUNCHING PROCESS;

SILICON WAFERS;

EID: 0034315661     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(00)00786-X     Document Type: Article

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