On 2D/3D numerical oxidation modeling: Calibration and investigation of silicon crystal orientation effect on stresses in shallow trench isolations

2000 International Conference on Modeling and Simulation of Microsystems - MSM 2000

Volumn , Issue , 2000, Pages 59-62

  Hoffmann, T ^a   Dombrowski, K F ^b   Senez, V ^a  

^a Institut Superieur de l'Electronique et du Numerique   (France)

^b IHP   (Germany)

Author keywords

Anisotropy; Isolation; Raman; Viscoelasticity

Indexed keywords

ANISOTROPY; CALIBRATION; COMPUTER SIMULATION; CRYSTAL ORIENTATION; NITRIDES; OXIDATION; SILICA; VISCOELASTICITY;

ISOLATION; MECHANICAL STRESS; RAMAN; SHALLOW TRENCH ISOLATIONS (STI);

INTEGRATED CIRCUITS;

EID: 6344243577     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)

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11. L. Jastrzebski et al., "Effect of Pattern Orientation on the Resistance to Process-Induced Dislocation Generation in (100) Silicon", J. Eletrochem. Soc., vol. 134, p. 209, 1987.