Influence of the silicon nitride oxidation on the performances of NCLAD isolation

Microelectronics Reliability

Volumn 38, Issue 5, 1998, Pages 795-805

  Tixier, A ^a   Senez, V ^b   Baccus, B ^b   Marmiroli, A ^a   Colpani, P ^a   Rebora, A ^a   Carnevale, G P ^a  

^a STMICROELECTRONICS   (Italy)

^b Institut Superieur de l'Electronique et du Numerique   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; OPTIMIZATION; OXIDATION; SEMICONDUCTING SILICON COMPOUNDS; SILICON NITRIDE;

SOFTWARE PACKAGE IMPACT-4;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0032064921     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(98)00005-5     Document Type: Article

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