Surface regrowth of Sb ion implanted Si(100)

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 120, Issue 1-4, 1996, Pages 226-229

  Peto G ^a   Schiller, V ^a   Khanh N Q ^a   Gyulai, J ^a   Kanski, J ^b  

^a RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

^b CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; CRYSTAL GROWTH; EPITAXIAL GROWTH; ION BOMBARDMENT; PHOTOEMISSION; RUTHERFORD BACKSCATTERING SPECTROSCOPY;

ANGULAR RESOLVED PHOTOEMISSION; SURFACE REGROWTH;

ION IMPLANTATION;

EID: 0030566532     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(96)00514-9     Document Type: Article

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