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Volumn 103, Issue 4, 1996, Pages 459-463
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Thermal regrowth of Si( 100) damaged by Ne, Ar, and Xe ion bombardment
a
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Author keywords
[No Author keywords available]
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Indexed keywords
ANNEALING;
ARGON;
CRYSTAL GROWTH;
ION BOMBARDMENT;
IONS;
NEON;
PHOTOEMISSION;
SPUTTERING;
SURFACE CLEANING;
XENON;
ANGLE RESOLVED PHOTOEMISSION;
ION SPUTTERING;
THERMAL INDUCED REGROWTH;
SILICON;
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EID: 0030382872
PISSN: 01694332
EISSN: None
Source Type: Journal
DOI: 10.1016/S0169-4332(96)00451-5 Document Type: Article |
Times cited : (2)
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References (16)
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