Study of the location of implanted fluorine atoms in silicon and germanium through their nuclear quadrupole interactions

Zeitschrift fur Naturforschung - Section A Journal of Physical Sciences

Volumn 51, Issue 5-6, 1996, Pages 560-564

  Nunes, Stacie S ^a   Sulaiman, S ^a   Sahoo, N ^a   Das, Tara Prasad ^a   Frank, M ^b   Kreische, W ^b   Nielsen, K B ^c  

^a STATE UNIVERSITY OF NEW YORK   (United States)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^c AARHUS UNIVERSITY   (Denmark)

Author keywords

Electric field gradient; Electronic structure; Hartree Fock; Impurities; Semiconductors

Indexed keywords

EID: 0040750220     PISSN: 09320784     EISSN: None     Source Type: Journal    
DOI: 10.1515/zna-1996-5-634     Document Type: Article

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