Growth kinetics of silicon carbide chemical vapor deposition from methyltrichlorosilane

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 4 A, 1999, Pages 2089-2091

  Kaneko, Tsutomu ^a   Sone, Hayato ^a   Miyakawa, Nobuaki ^a   Naka, Mitihiro ^a,b  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

^b JAPAN ATOMIC ENERGY AGENCY   (Japan)

Author keywords

CVD; Kinetics; Methyltrichlorosilane (MTS); SiC; Silicon carbide

Indexed keywords

EID: 0005416178     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.2089     Document Type: Article

References (12)

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