Influence of ultra-thin YSZ layer on heteroepitaxial CeO2/YSZ/Si(0 0 1) films analyzed by X-ray reciprocal space map

Journal of Crystal Growth

Volumn 219, Issue 3, 2000, Pages 253-262

  Chen, Chun Hua ^a   Saiki, Atsushi ^a   Wakiya, Naoki ^a   Shinozaki, Kazuo ^a   Mizutani, Nobuyasu ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CERIUM COMPOUNDS; CRYSTAL DEFECTS; DEPOSITION; FILM GROWTH; LATTICE CONSTANTS; PULSED LASER APPLICATIONS; SILICON WAFERS; STRAIN; THIN FILMS; X RAY CRYSTALLOGRAPHY; YTTRIUM COMPOUNDS; ZIRCONIA;

HETEROEPITAXIAL GROWTH; PULSED LASER DEPOSITION (PLD); X RAY RECIPROCAL SPACE MAPPING; YTTRIA;

EPITAXIAL GROWTH;

EID: 0034298739     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00615-1     Document Type: Article

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