Double CeO2/YSZ buffer layer for the epitaxial growth of YBa2Cu3O7-δ films on Si (001) substrates

Physica C: Superconductivity and its Applications

Volumn 269, Issue 1-2, 1996, Pages 124-130

  Méchin, Laurence ^a   Villégier, Jean Claude ^a   Rolland, Guy ^b   Laugier, Frédéric ^b  

^a CEA GRENOBLE   (France)

^b CEA LETI   (France)

Author keywords

Epitaxial growth; Silicon substrate; Thickness of buffer layers; YBaCuO

Indexed keywords

BOLOMETERS; CERIUM COMPOUNDS; CRITICAL CURRENT DENSITY (SUPERCONDUCTIVITY); ELLIPSOMETRY; EPITAXIAL GROWTH; INTERFACES (MATERIALS); LASER ABLATION; SILICON; THICKNESS MEASUREMENT; X RAY DIFFRACTION ANALYSIS; YTTRIUM COMPOUNDS; ZIRCONIA;

BUFFER LAYERS; CERIUM DIOXIDE; CRITICAL TEMPERATURES; PULSED LASER ABLATION; SPECTROSCOPIC ELLIPSOMETRY; X RAY REFLECTIVITY; YTTRIA STABILIZED ZIRCONIA; YTTRIUM BARIUM CUPRATES;

HIGH TEMPERATURE SUPERCONDUCTORS;

EID: 0030243165     PISSN: 09214534     EISSN: None     Source Type: Journal    
DOI: 10.1016/0921-4534(96)00435-2     Document Type: Article

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