New poly-Si thin-film transistor with poly-Si/a-Si double active layer

IEEE Electron Device Letters

Volumn 21, Issue 10, 2000, Pages 488-490

  Park, Kee Chan ^a   Choi, Kwon Young ^b   Yoo, Juhn Suk ^a   Han, Min Koo ^a  

^a Seoul National University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CRYSTALLIZATION; CURRENT DENSITY; SEMICONDUCTING SILICON;

CRYSTALLIZATION DEPTH CONTROL; DOUBLE ACTIVE LAYERS; POLYSILICON;

THIN FILM TRANSISTORS;

EID: 0034296136     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.870610     Document Type: Article

References (7)

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