The grain growth blocking effect of polycrystalline silicon film by thin native silicon oxide barrier during the excimer laser recrystallization

Applied Physics Letters

Volumn 75, Issue 4, 1999, Pages 460-462

  Park, Kee Chan ^a   Jeon, Jae Hong ^a   Park, Cheol Min ^a   Lee, Min Cheol ^a   Han, Min Koo ^a   Choi, Kwon Young ^b  

^a Seoul National University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; ANNEALING; CRYSTALLIZATION; EXCIMER LASERS; GRAIN GROWTH; LASER APPLICATIONS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; SILICA;

LASER RECRYSTALLIZATION;

SEMICONDUCTING FILMS;

EID: 0032615125     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124400     Document Type: Article

References (8)

1. S. Seki, O. Kogure, and B. Tsujiyama, IEEE Electron Device Lett. 8, 434 (1987).
2. K. Nakazawa, K. Tanaka, S. Suyama, K. Kato, and S. Kohda, SID '90 Technical Digest, p. 311.
3. J. H. Jeon, C. M. Park, J. S. Yoo, C. H. Kim, and M. K. Han, Jpn. J. Appl. Phys., Part 1 37, 1064 (1998).
4. K. H. Lee, W. Y. Lim, J. K. Park, and J. Jang, SID '97 Technical Digest, p. 481.
5. G. D. Cody, B. Abeles, C. Wronski, C. R. Stephens, and B. Brooks, Sol. Cells 2, 227 (1980).
6. M. O. Thompson, G. J. Galvin, and J. W. Mayer, Phys. Rev. Lett. 52, 2360 (1984).
7. J. Narayan, C. W. White, O. W. Holland, and M. J. Aziz, J. Appl. Phys. 56, 1821 (1984).
8. M. K. Moravvej-Farshi and M. A. Green, Solid-State Electron. 30, 1053 (1987).