Shape deterioration of mesa structures in post-CMOS anisotropic etching of silicon microsensors: An experimental study

Sensors and Actuators, A: Physical

Volumn 86, Issue 1-2, 2000, Pages 115-121

  Takao, Hidekuni ^a   Yong, Chuck Chen ^a   Rajanna, K ^a,b   Ishida, Makoto ^a  

^a TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

^b INDIAN INSTITUTE OF SCIENCE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ADHESION; ANISOTROPY; CMOS INTEGRATED CIRCUITS; COMPRESSIVE STRESS; DETERIORATION; ETCHING; MICROSTRUCTURE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON; SILICON NITRIDE; SPUTTERING; STRESS ANALYSIS;

MESA STRUCTURES; SHAPE DETERIORATION;

MICROSENSORS;

EID: 0034294277     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(00)00437-4     Document Type: Article

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