Influence of oxidizing agents on etching and passivation of silicon in KOH solution

Electrochimica Acta

Volumn 45, Issue 28, 2000, Pages 4645-4653

  Xia, X H ^a   Kelly, J J ^a  

^a UTRECHT UNIVERSITY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CURRENT DENSITY; ELECTRIC POTENTIAL; ELECTROCHEMISTRY; ETCHING; MORPHOLOGY; OXIDATION; PASSIVATION; POTASSIUM COMPOUNDS; REDUCTION; SINGLE CRYSTALS;

OXIDIZING AGENTS; POTASSIUM HYDROXIDE;

SEMICONDUCTING SILICON;

EID: 0034291699     PISSN: 00134686     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0013-4686(00)00616-2     Document Type: Article

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