Characterization of proton-irradiated InGaAs/GaAs multiple quantum well structures by nonresonant transient four-wave mixing technique

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 10, 2000, Pages 5781-5787

  Jarasiunas, Kestutis ^a   Mizeikis, Vygantas ^a   Iwamoto, Satoshi ^b   Nishioka, Masao ^b   Someya, Takao ^b   Fukutani, Katsuyuki ^b   Arakawa, Yasuhiko ^c   Shimura, Tsutomu ^b   Kuroda, Kazuo ^b  

^a VILNIUS UNIVERSITY   (Lithuania)

^b INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER MOBILITY; ELECTRON TRANSPORT PROPERTIES; FOUR WAVE MIXING; POINT DEFECTS; PROTON IRRADIATION; RADIATION EFFECTS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SUBSTRATES; THERMAL EFFECTS;

CARRIER LIFETIME; CARRIER TRANSPORT; NONRESONANT TRANSIENT FOURWAVE MIXING; PHOTOEXCITATION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0034290732     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.5781     Document Type: Article

References (23)

1. D. D. Nolte: J. Appl. Phys. 85 (1999) 6259.
2. Photorefractive Effects and Materials, ed. D. D. Nolte (Kluwer Academic, Dordrecht, 1995).
3. Q. Wang, R. M. Brubaker, D. D. Nolte and M. R. Melloch: J. Opt. Soc. Am. B 9 (1992) 1626.
4. Y. Silberberg, P. W. Smith, D. A. B. Miller, B. Tell, A. C. Gossard and W. Wiegmann: Appl. Phys. Lett. 46 (1985) 701.
5. E. Lugagne Delpon, J. L. Oudar, N. Bouch and R. Raj: Proc. Conf. Laser and Electro-Optics '98, San Francisco, 1998 (Optical Society of America, Washington, 1998) p. 536.
6. A. C. Warren, J. M. Woodall, J. L. Freeouf, D. Grishkowsky, D. T. McInturff, M. R. Melloch and N. Otsuka: Appl. Phys. Lett. 57 (1990) 1331.
7. W. Walukiewicz, Z. Liliental-Weber, J. Jasinski, M. Almonte, A. Prasad, E. E. Haller, E. R. Weber, P. Grenier and J. F. Whitaker: Appl. Phys. Lett. 69 (1996) 2569.
8. K. Jarasiunas, M. Sudzus, L. Bastiene, V. Gudelis and R. Jasinskaite: Compound Semiconductors, eds. M. S. Shur and R. A. Suris (IOP Publishing, Bristol, 1997) Chap. 12, p. 1005.
9. M. Lambsdorff, J. Kuhl, J. Rosenzweig, A. Axmann and Jo Schneider: Appl. Phys. Lett. 58 (1991) 1881.
10. T. Sasaki, J. Nishizawa and M. Esashi: J. Appl. Phys. 83 (1998) 4069.
11. J. C. Dyment, J. C. North and L. A. D'Asaro: J. Appl. Phys. 44 (1973) 207.
12. K. Steeples, G. Dearnaley and A. M. Stoneham: Appl. Phys. Lett. 36 (1980) 981.
13. C. A. Hoffman, K. Jarasiunas, H. J. Gerritsen and A. V. Nurmikko: Appl. Phys. Lett. 33 (1978) 536.
14. A. Othonos: J. Appl. Phys. 83 (1998) 1789.
15. M. Petrauskas, S. Juodkazis, V. Netiksis, M. Willander, A. Ouacha and B. Hammarlund: Semicond. Sci. Technol. 7 (1992) 1355.
16. L. V. Dao, M. Gal, H. Tan and C. Jagadish: Appl. Phys. Lett. 72 (1998) 2008.
17. S. Niki, C. L. Lin, W. S. C. Chang and H. H. Wieder: Appl. Phys. Lett. 55 (1989) 1339.
18. H. H. Tan, C. Jagadish, K. P. Korona, J. Jasinski, M. Kaminska, R. Viselga, S. Marcinkevicius and A. Krotkus: IEEE J. of Sel. Top. Quantum Electron. 2 (1996) 636.
19. J. Vaitkus, E. Gaubas, K. Jarasiunas and M. Petrauskas: Semicond. Sci. Technol. 7 (1992) A131.
20. V. Kazukauskas, J. Storasta and J. Vaitkus: J. Appl. Phys. 80 (1996) 2269.
21. D. D. Nolte: Appl. Phys. Lett. 70 (1997) 3401.
22. D. D. Nolte: Phys. Rev. B 58 (1998) 7994.
23. B. Deveaud: Optical Properties of Semiconductors, ed. G. Martinez (Kluwer Academic, Dordrecht, 1993) p. 119.