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Volumn 9, Issue 9, 2000, Pages 1774-1778

Different characteristics of boron and nitrogen atoms/ions on silicon (001) substrate and their effect on boron nitride growth

Author keywords

[No Author keywords available]

Indexed keywords

ADHESION; ADSORPTION; ATOMS; BOND STRENGTH (MATERIALS); IONS; MATHEMATICAL MODELS; POTENTIAL ENERGY; PROBABILITY DENSITY FUNCTION; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SUBSTRATES; SURFACES;

EID: 0034276485     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(00)00327-7     Document Type: Article
Times cited : (2)

References (26)
  • 25
    • 85120130492 scopus 로고    scopus 로고
    • K. Fukui H. Fujimoto Frontier Orbitals and Reaction Paths: Selected Papers of Kenichi Fukui 1997 World Scientific Singapore
    • (1997)
    • Fukui, K.1    Fujimoto, H.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.