Growth of CVD heteroepitaxial diamond on silicon (001) and its electronic properties

Diamond and Related Materials

Volumn 9, Issue 9, 2000, Pages 1626-1631

  He, X C ^a   Shen, H S ^a   Zhang, Z M ^a   Hu, X J ^a   Wan, Y Z ^a   Shen, T ^b  

^a SHANGHAI JIAO TONG UNIVERSITY   (China)

^b Hirata Precision Products Co Ltd   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CARRIER CONCENTRATION; CARRIER MOBILITY; CHEMICAL VAPOR DEPOSITION; CRYSTAL ORIENTATION; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRONIC PROPERTIES; EPITAXIAL GROWTH; HALL EFFECT; RAMAN SPECTROSCOPY; SEMICONDUCTING SILICON; SILICON CARBIDE;

MICRO AUGER ANALYSIS; MICRO RAMAN ANALYSIS; MICROWAVE CHEMICAL VAPOR DEPOSITION;

DIAMOND FILMS;

EID: 0034275541     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(00)00317-4     Document Type: Article

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