Surface observation of β-SiC substrate after negative bias treatment in diamond deposition

Applied Surface Science

Volumn 117-118, Issue , 1997, Pages 582-586

  Yamamoto, Tadaaki ^a   Maki, Tetsuro ^a   Kobayashi, Takeshi ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

Amorphous layer; CVD diamond; Etching; Negative bias treatment; Xenon gas; SiC

Indexed keywords

AMORPHOUS FILMS; CHEMICAL VAPOR DEPOSITION; ETCHING; INTERFACES (MATERIALS); NUCLEATION; SEMICONDUCTING FILMS; SUBSTRATES; THIN FILM CIRCUITS;

MICROWAVE PLASMA ASSISTED CHEMICAL VAPOR DEPOSITION (MPCVD); NEGATIVE BIAS TREATMENT;

SEMICONDUCTING DIAMONDS;

EID: 0031548270     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(97)80146-8     Document Type: Article

References (9)

1. Y. Otsuka, S. Suzuki, S. Shikama, T. Maki, T. Kobayashi, Jpn. J. Appl. Phys. 34 (1995) L551.
2. T. Kobayashi, T. Ariki, M. Iwabuchi, T. Maki, S. Shikama, S. Suzuki, J. Appl. Phys. 76 (1994) 1977.
3. B.R. Stoner, J.T. Glass, Appl. Phys. Lett. 60 (1992) 698.
4. S. Yugo, T. Kanai, T. Kimura, T. Muto, Appl. Phys. Lett. 58 (1991) 1036.
5. H. Kawarada, T. Suesada, H. Nagasawa, Appl. Phys. Lett. 66 (1995) 583.
6. R.C. Henderson, P.B. Marcus, W.J. Polit, J. Appl. Phys. 42 (1971) 1208.
7. I.H. Chan, R.H. Summergrad, Appl. Phys. Lett. 11 (1967) 12-13.
8. S. Naito, M. Ikeda, N. Ito, T. Hattori, T. Goto, Jpn. J. Appl. Phys. 32 (1993) 5721.
9. H. Sugai, H. Toyoda, J. Vac. Sci. Technol. A 10 (1992) 1193.