MSM photodetector with an integrated microlens array for improved optical coupling

Microwave and Optical Technology Letters

Volumn 26, Issue 6, 2000, Pages 357-360

  Ozelo, H F B ^a   De Barros Jr , L E M ^a   Nabet, B ^b   Neto, L G ^c   Romero, M A ^c   Ramos, A C S ^a   Swart, J W ^a  

^a UNIVERSITY OF CAMPINAS   (Brazil)

^b Drexel University   (United States)

^c UNIVERSITY OF SÃO PAULO   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED OPTICS; LENSES; OPTICAL MATERIALS; OPTOELECTRONIC DEVICES; PHOTOCURRENTS; POLYMERS;

INTEGRATED MICROLENS ARRAYS; METAL-SEMICONDUCTOR-METAL (MSM) PHOTODETECTORS; OPTICAL COUPLING;

PHOTODETECTORS;

EID: 0034275067     PISSN: 08952477     EISSN: None     Source Type: Journal    
DOI: 10.1002/1098-2760(20000920)26:6<357::AID-MOP3>3.0.CO;2-W     Document Type: Article

References (8)

1. S.M. Sze, D.J. Coleman, Jr., and A. Loya, Current transport in metal-semiconductor-metal (MSM) structures, Solid-State Electron 14 (1971), 1209-1218.
2. E. Droge, E.H. Bottcher, D. Bimberg, O. Reimann, and R. Steingruber, 70 GHz InGaAs metal-semiconductor-metal photodetectors for polarisation-insensitive operation, Electron Lett 34 (1998), 1421-1422.
3. J.W. Seo, A.A. Ketterson, D.G. Ballegeer, K.Y. Cheng, A. Adesida, X.N. Li, and T. Gessert, Comparative study of metal-semiconductor-metal photodetectors on GaAs with indium tin oxide and Ti/Au electrodes, IEEE Photon Technol Lett 4 (1992), 888-890.
4. + layer GaAs mesa finger interdigital surface photodetectors, IEEE Electron Device Lett 10 (1989), 461-463.
5. Z.D. Popovic, R.A. Spraguc, and G.A. Neville-Connel, Technique for monolithic fabrication of microlens array, Appl Opt 27 (1988).
6. M. Shur, Physics of semiconductor devices, Prentice Hall, Englewood Cliffs, NJ, 1990.
7. L.C. Liou and B. Nabet, Simple analytical model of bias dependence of the photocurrent of metal-semiconductor-metal photodetectors, Appl Opt 35 (1996), 15-23.
8. J.A. Diniz, L.E.M. de Barros, Jr., R.T. Yoshioka, G.S. Lujan, I. Danilov, and J.W. Swart, One-step silicon nitride passivation by ECR-CVD for heterostructure transistors and MIS devices, Proc 1999 Mater Res Soc Spring Meeting, Apr. 1999, vol. 573, pp. 137-142.