Absorption coefficient of wurtzite GaN calculated from an empirical tight binding model

Solid State Communications

Volumn 116, Issue 3, 2000, Pages 153-157

  Jogai, B ^a  

^a WRIGHT STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; BAND STRUCTURE; BINDING ENERGY; MATRIX ALGEBRA; POLARIZATION; SEMICONDUCTING GALLIUM COMPOUNDS; THIN FILMS;

EMPIRICAL TIGHT BINDING METHOD (ETBM); GALLIUM NITRIDE;

SEMICONDUCTING FILMS;

EID: 0034273965     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(00)00305-7     Document Type: Article

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