Reciprocal lattice mapping of InGaAs layers grown on InP(001) and GaAs(001) substrates

Opto-Electronics Review

Volumn 7, Issue 2, 1999, Pages 107-112

  Bak Misiuk J ^a   Kaniewski, J ^b   Domagala J ^a   Reginski K ^b   Adamczewska, J ^a   Trela, J ^a  

^a INSTITUTE OF PHYSICS   (Poland)

^b Department of Micro and Nanotechnology of Wide Bandgap Semiconductors   (Poland)

Author keywords

Diffuse scattering; InGaAs; Molecular beam epitaxy; X ray diffraction

Indexed keywords

EID: 0346874433     PISSN: 12303402     EISSN: 18963757     Source Type: Journal    
DOI: None     Document Type: Article

References (13)

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