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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 9 B, 2000, Pages 5456-5459

Characterization of metal-ferroelectric-(metal-)insulator-semiconductor (MF(M)IS) structures using (Pb, La)(Zr, Ti)O3 and Y2O3 films

(3) Tokumitsu, Eisuke a Takahashi, Daisuke a Ishiwara, Hiroshi a

a TOKYO INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC FILMS; EPITAXIAL GROWTH; FERROELECTRIC MATERIALS; FERROELECTRICITY; HYSTERESIS; LEAD COMPOUNDS; LEAKAGE CURRENTS; MOLECULAR BEAM EPITAXY; PERMITTIVITY; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; YTTRIUM COMPOUNDS;

CAPACITANCE VOLTAGE CHARACTERISTICS; FERROELECTRIC GATE FIELD EFFECT TRANSISTORS; HYSTERESIS LOOP; SOL-GEL TECHNIQUE;

MISFET DEVICES;

EID: 0034262924 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.39.5456 Document Type: Article

Times cited : (15)

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