Effects of crystallization annealing sequence for SrBi2Ta2O9 (SBT) film on Pt/SBT interface morphology and electrical properties of ferroelectric capacitor

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 9 B, 2000, Pages 5465-5468

  Yang, Woo Seok ^a   Yeom, Seung Jin ^a   Kim, Nam Kyeong ^a   Kweon, Soon Yong ^a   Roh, Jae Sung ^a  

^a Hynix Semiconductor Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; CAPACITORS; CRYSTALLIZATION; ELECTRIC PROPERTIES; ELECTRODEPOSITION; GRAIN GROWTH; INTERFACES (MATERIALS); MORPHOLOGY; POLARIZATION; STRONTIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

CRYSTALLIZATION ANNEALING; FERROELECTRIC CAPACITOR; FURNACE ANNEALING; INTERFACE MORPHOLOGY; SHORT FAIL; STRONTIUM BISMUTH TANTALATE FILM; SWITCHING POLARIZATION;

FERROELECTRIC THIN FILMS;

EID: 0034262669     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.5465     Document Type: Article

References (6)

1. C. A.-Pazde Araujo, J. D. Cuchiaro, L. D. Mcmillan, M. C. Scott and J. F. Scott: Nature 374 (1995) 627.
2. T. Noguchi, T. Hase and Y. Miyasaka: Jpn. J. Appl. Phys. 35 (1996) 4900.
3. A. Furuya and J. D. Cuchiaro: J. Appl. Phys. 84 (1998) 6788.
4. S. Y. Kweon, S. J. Yeom, N. K. Kim, H. J. Sun, Y. S. Yu and S. K. Lee: J. Korean Phys. Soc. 35 (1999) 110.
5. S. Y. Kweon, S. J. Yeom, N. K. Kim, H. J. Sun, Y. S. Yu and S. K. Lee: Integr. Ferroelectr. 14 (1999) 299.
6. D. S. Shin, H. N. Lee, C. W. Lee, Y. T. Kim und I. H. Choi: Jpn. J. Appl. Phys. 37 (1998) 5189.