Sensitive acceleration sensor using amorphous wire SI element combined with CMOS IC multivibrator for environmental sensing

IEEE Transactions on Magnetics

Volumn 36, Issue 5 I, 2000, Pages 3667-3669

  Shen, L P ^b   Mohri, K ^a,b   Uchiyama, T ^b   Honkura, Y ^c  

^a IEEE   (Japan)

^b NAGOYA UNIVERSITY   (Japan)

^c AICHI STEEL CORPORATION   (Japan)

Author keywords

Acceleration sensor; Amorphous wire; CMOS IC multivibrator circuit; Stress impedance effect

Indexed keywords

AMORPHOUS MATERIALS; CMOS INTEGRATED CIRCUITS; ELECTRIC CONDUCTIVITY; ELECTRIC RESISTANCE; MAGNETIZATION; MULTIVIBRATORS;

ACCELERATION SENSORS; AMORPHOUS WIRES; ENVIRONMENTAL SENSING; STRESS-IMPEDANCE (SI) ELEMENTS;

SENSORS;

EID: 0034260984     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/20.908935     Document Type: Article

References (5)

1. Giant MI and SI effects in amorphous wire for sensitive micro magnetic sensors
2. Sensitive stress-impedance micro sensor using amorphous magnetostrctive wire
3. Sensitive strain gauge using a CMOS IC combined with an amorphous magnetostrictive wire cantilever beam
4. Sensitive stress sensor using amorphous magnetostrictive wires on both ends fixed double beam and diaph
5. An electrostatic servo-acceleration with mG resolution