Sensitive stress sensor using amorphous magnetostrictive wires on both ends fixed double beam and diaphragm

IEEE Transactions on Magnetics

Volumn 35, Issue 5 PART 2, 1999, Pages 3619-3621

  Shen, L P ^a   Naruse, Y ^a   Kusumoto, D ^a   Kita, E ^a   Mohri, K ^a   Uchiyama, T ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

Amorphous; Both ends fixed double beam; Cmos multivibrator; Stress impedance effect; Wire

Indexed keywords

AMORPHOUS MATERIALS; CMOS INTEGRATED CIRCUITS; COBALT COMPOUNDS; MAGNETIC HYSTERESIS; MAGNETIZATION; MAGNETOSTRICTION; MATHEMATICAL MODELS; SENSITIVITY ANALYSIS; SENSORS; STRESS ANALYSIS;

AMORPHOUS WIRES; SENSITIVE STRESS SENSORS;

MAGNETOSTRICTIVE DEVICES;

EID: 0033183868     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/20.800609     Document Type: Article

References (3)

1. K. Mohrl, T. Uchiyama and L. V. Panina Giant Ml and SI effects in Amorphous Wires for Sensitive Micro Magnetic Sensors," Proc,17th. Mag. Prop. andAppl. of Mag. Mat. (Chicago, pp,l-2S, May 11-13), 1993
2. L P, Shen, T. Uchlyama, K. Mohri, K. Kits and K. Bushida Sensitive Stress-Impedance Micro Sensor Using Amorphous Magnetostrctive Wire," IEEE'Trans. Magn., vol. 33, No. 5,1997,pp.3355-3357
3. L. P. Shen, K. Kit, Y Narase, K. Mohri and T. Uchiyama. "Sensilive. strain Gauge Using a CMOS 1C Combined with an Amorphous Magnetostrictive Wire Cantilever Beam," J. Magn. Soc. Japn, vol, 22, No. 4-2,1998, pp.677-680.