Low-resistance tunnel magnetoresistive head

IEEE Transactions on Magnetics

Volumn 36, Issue 5 I, 2000, Pages 2549-2553

  Ohashi, K ^a,b   Hayashi, K ^b   Nagahara, K ^b   Ishihara, K ^b   Fukami, E ^b   Fujikata, J ^b   Mori, S ^b   Nakada, M ^b   Mitsuzuka, T ^b   Matsuda, K ^b   Mori, H ^b   Kamijo, A ^b   Tsuge, H ^b  

^a IEEE   (Japan)

^b NEC CORPORATION   (Japan)

Author keywords

In situ natural oxidation; Signal to noise ratio; Spin dependent tunneling; TMR head

Indexed keywords

ELECTRIC CONDUCTIVITY; GIANT MAGNETORESISTANCE; MAGNETIC RECORDING; PERMANENT MAGNETS; SIGNAL TO NOISE RATIO; SILICON WAFERS;

IN SITU NATURAL OXIDATION (ISNO); TUNNEL MAGNETORESISTIVE (TMR) HEADS;

MAGNETIC HEADS;

EID: 0034260630     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/20.908506     Document Type: Article

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