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Volumn 258-263, Issue 9993, 1997, Pages 1767-1772
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Diffusion and precipitation of oxygen in silicon doped with germanium
a a a |
Author keywords
Germanium; Oxygen; Relative oxygen loss; Silicon; Thermal donor
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Indexed keywords
ANNEALING;
COMPOSITION EFFECTS;
DIFFUSION IN SOLIDS;
OXYGEN;
PRECIPITATION (CHEMICAL);
REACTION KINETICS;
SEMICONDUCTING GERMANIUM;
SEMICONDUCTOR DOPING;
THERMAL DONORS;
SEMICONDUCTING SILICON;
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EID: 0031339555
PISSN: 02555476
EISSN: 16629752
Source Type: Book Series
DOI: 10.4028/www.scientific.net/msf.258-263.1767 Document Type: Article |
Times cited : (5)
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References (13)
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