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Volumn 258-263, Issue 9993, 1997, Pages 1767-1772

Diffusion and precipitation of oxygen in silicon doped with germanium

Author keywords

Germanium; Oxygen; Relative oxygen loss; Silicon; Thermal donor

Indexed keywords

ANNEALING; COMPOSITION EFFECTS; DIFFUSION IN SOLIDS; OXYGEN; PRECIPITATION (CHEMICAL); REACTION KINETICS; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR DOPING;

EID: 0031339555     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.258-263.1767     Document Type: Article
Times cited : (5)

References (13)
  • 10
    • 0342943226 scopus 로고    scopus 로고
    • ed. R.Jones (Dordrecht / Boston / London: Kluwer Academic Publishers)
    • G.D.Watkins, in "Early Stages of Oxygen Precipitation in Silicon" ed. R.Jones (Dordrecht / Boston / London: Kluwer Academic Publishers) pp.1-18 (1996).
    • (1996) Early Stages of Oxygen Precipitation in Silicon , pp. 1-18
    • Watkins, G.D.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.