Accurate compact model for ferroelectric memory field effect transistors

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn , Issue , 1999, Pages 175-178

  Ullmann, Marc ^a   Goebel, Holger ^a   Hoenigschmid, Heinz ^a   Haneder, Thomas ^a   Dietz, Guido W ^a  

^a HELMUT SCHMIDT UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; FERROELECTRIC DEVICES; MOS CAPACITORS; NONVOLATILE STORAGE; POLARIZATION; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR STORAGE;

FERROELECTRIC MEMORY FIELD EFFECT TRANSISTORS (FEMFET);

MOSFET DEVICES;

EID: 0033285113     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)