Fractal model of a porous semiconductor

Applied Surface Science

Volumn 162, Issue , 2000, Pages 122-132

  Aroutiounian, V M ^a   Ghoolinian, M Zh ^a   Tributsch, H ^b  

^a YEREVAN STATE UNIVERSITY   (Armenia)

^b HAHN MEITNER INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; ENERGY GAP; FRACTALS; MATHEMATICAL MODELS; NANOSTRUCTURED MATERIALS; PERCOLATION (SOLID STATE); POROSITY; POROUS SILICON; SILICA; SINGLE CRYSTALS; SURFACE PHENOMENA; SURFACE STRUCTURE;

DIELECTRIC ISOLATION;

SEMICONDUCTING SILICON;

EID: 0034248422     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00180-X     Document Type: Article

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