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Volumn E83-C, Issue 8, 2000, Pages 1183-1188

Homogeneous transport in silicon dioxide using the spherical-harmonics expansion of the BTE

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; ELECTRIC FIELDS; ELECTRON SCATTERING; MOLECULAR DYNAMICS; MONTE CARLO METHODS; PARTIAL DIFFERENTIAL EQUATIONS; PHONONS; SEMICONDUCTING SILICON COMPOUNDS; THERMAL EFFECTS;

EID: 0034247713     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (9)

References (12)
  • 1
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    • References [1] S. Reggiani, M.C. Vecchi, and M. Rudan, "Investigation on electron and hole transport properties using the fullband spherical-harmonics expansion method," IEEE Trans. Electron Devices, vol.45, no.9, pp.2010-2017, Sept. 1998.
    • (1998) IEEE Trans. Electron Devices, . , vol.45 , Issue.9 , pp. 2010-2017
    • Reggiani, S.1    Vecchi, M.C.2    Rudan, M.3
  • 2
    • 0023982806 scopus 로고
    • Hot electron in SiO2: Ballistic to steady-state transport
    • M.V. Fischetti and D.J. DiMaria, "Hot electron in SiO2: Ballistic to steady-state transport," Solid State Electron., vol.31, no.3/4, pp.629-636, 1988.
    • (1988) Solid State Electron., . , vol.31 , Issue.3-4 , pp. 629-636
    • Fischetti, M.V.1    Dimaria, D.J.2
  • 3
    • 51249167887 scopus 로고
    • A deterministic approach to the solution of the BTE in semiconductors
    • D. Ventura, A. Gnudi, and G. Baccarani, "A deterministic approach to the solution of the BTE in semiconductors," La Rivista del Nuovo Cimento, vol.18, no.6, pp.1-33, 1995.
    • (1995) La Rivista Del Nuovo Cimento , vol.18 , Issue.6 , pp. 1-33
    • Ventura, D.1    Gnudi, A.2    Baccarani, G.3
  • 4
    • 0031647347 scopus 로고    scopus 로고
    • Modeling electron and hole transport with full-band structure effects by means of the spherical-harmonics expansion of the BTE
    • Jan.
    • M.C. Vecchi and M. Rudan, "Modeling electron and hole transport with full-band structure effects by means of the spherical-harmonics expansion of the BTE," IEEE Trans. Electron Devices, vol.ED-45, no.l, pp.230-238, Jan. 1998.
    • (1998) IEEE Trans. Electron Devices , vol.45 , Issue.50 , pp. 230-238
    • Vecchi, M.C.1    Rudan, M.2
  • 5
    • 0027576244 scopus 로고
    • Twodimensional MOSFET simulation by means of a multidimensional spherical harmonics expansion of the Boltzmann transport equation
    • A. Gnudi, D. Ventura, G. Baccarani, and F. Odeh, "Twodimensional MOSFET simulation by means of a multidimensional spherical harmonics expansion of the Boltzmann transport equation," Solid-State Electron., vol.36, no.4, pp.575-581, 1993.
    • (1993) Solid-State Electron. , vol.36 , Issue.4 , pp. 575-581
    • Gnudi, A.1    Ventura, D.2    Baccarani, G.3    Odeh, F.4
  • 6
    • 84983227767 scopus 로고
    • Incorporating full band-structure effects in the sphericalharmonics expansion of the Boltzmann transport equation
    • Honolulu, Hawaii, IEEE, June
    • M.C. Vecchi, D. Ventura, A. Gnudi, and G. Baccarani, "Incorporating full band-structure effects in the sphericalharmonics expansion of the Boltzmann transport equation," Proc. NUPAD V, pp.55-58, Honolulu, Hawaii, IEEE, June 1994.
    • (1994) Proc. NUPAD V , pp. 55-58
    • Vecchi, M.C.1    Ventura, D.2    Gnudi, A.3    Baccarani, G.4
  • 7
    • 0000574365 scopus 로고
    • An efficient method for evaluating the energy distribution of electrons in semiconductors based on the spherical harmonics expan-sion
    • Feb.
    • D. Ventura, A. Gnudi, and G. Baccarani, "An efficient method for evaluating the energy distribution of electrons in semiconductors based on the spherical harmonics expan-sion," IEICE Trans. Electron., vol.E75-C, no.2, pp.194-199, Feb. 1992.
    • (1992) IEICE Trans. Electron. , vol.75 , Issue.2 , pp. 194-199
    • Ventura, D.1    Gnudi, A.2    Baccarani, G.3
  • 8
    • 0000354295 scopus 로고
    • Band structure and optical properties of silicon dioxide
    • Feb.
    • P.M. Schneider and W.B. Fowler, "Band structure and optical properties of silicon dioxide," Phys. Rev. Lett., vol.36, no.8, pp.425-428, Feb. 1976.
    • (1976) Phys. Rev. Lett. , vol.36 , Issue.8 , pp. 425-428
    • Schneider, P.M.1    Fowler, W.B.2
  • 11
    • 0000791441 scopus 로고
    • Charge-carrier transport phenomena in amorphous SiC>2: Direct measurement of the drift mobility and lifetime
    • R.C. Hughes, "Charge-carrier transport phenomena in amorphous SiC>2: Direct measurement of the drift mobility and lifetime," Physical Review Letters, vol.30, no.26, pp.1333-1330, 1973.
    • (1973) Physical Review Letters, . , vol.30 , Issue.26 , pp. 1333-11330
    • Hughes, R.C.1
  • 12
    • 0001484358 scopus 로고
    • Velocity acquired by an electron in a finite electric field in a polar crystal
    • K.K. Thornber and R.P. Feynman, "Velocity acquired by an electron in a finite electric field in a polar crystal," Physical Review B, vol.1, p.4099-4111, 1970.
    • (1970) Physical Review B, . , vol.1 , pp. 4099-4111
    • Thornber, K.K.1    Feynman, R.P.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.