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Volumn 72, Issue 2, 1998, Pages 138-140

High-power near-resonant 1.55 μm emitting InGaAsP/InP antiguided diode laser arrays

Author keywords

[No Author keywords available]

Indexed keywords

ARRAYS; LASER BEAMS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

EID: 0031676738     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120667     Document Type: Article
Times cited : (12)

References (14)
  • 1
    • 0002639813 scopus 로고
    • in edited by D. Botez by and D. Scifres Cambridge University Press, Cambridge, U.K.
    • D. Botez, in Diode Laser Arrays, edited by D. Botez by and D. Scifres (Cambridge University Press, Cambridge, U.K., 1994), pp. 1-72.
    • (1994) Diode Laser Arrays , pp. 1-72
    • Botez, D.1
  • 9
    • 21544481960 scopus 로고    scopus 로고
    • 1.15Q InGaAsP denotes material with a band gap corresponding to a wavelength of 1.15 μm
    • 1.15Q InGaAsP denotes material with a band gap corresponding to a wavelength of 1.15 μm.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.