An optoelectronic switch based on a triangular-barrier structure

IEEE Journal of Quantum Electronics

Volumn 34, Issue 10, 1998, Pages 1882-1885

  Guo, Der Feng ^a,b,c  

^a DEPARTMENT OF ELECTRONIC ENGINEERING   (Taiwan)

^b FENG CHIA UNIVERSITY   (Taiwan)

^c NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

Avalanche multiplication; Carrier confinement; Negative differential resistance; Optoelectronic switch; Triangular barrier

Indexed keywords

CARRIER MOBILITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TRANSPORT PROPERTIES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NEGATIVE RESISTANCE; OPTOELECTRONIC DEVICES; PHOTOMULTIPLIERS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

AVALANCHE MULTIPLICATION; CARRIER CONFINEMENT; NEGATIVE DIFFERENTIAL RESISTANCE; OPTOELECTRONIC SWITCHES; TRIANGULAR BARRIER;

OPTICAL SWITCHES;

EID: 0032186828     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.720223     Document Type: Article

References (11)

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