GaAs-based vertical-cavity surface-emitting laser on Si substrate by metallorganic chemical vapor deposition

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 35, Issue 12 B, 1996, Pages

  Murata, Yoshihiko ^a   Nakanishi, Naoki ^a   Egawa, Takashi ^a   Jimbo, Takashi ^a   Umeno, Masayoshi ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; GOLD; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MIRRORS; MULTILAYERS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

BRAGG REFLECTOR; METAL THIN FILM REFLECTOR; VERTICAL CAVITY SURFACE EMITTING LASERS;

SEMICONDUCTOR LASERS;

EID: 0030398321     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.l1631     Document Type: Article

References (8)