Inductive-coupling-nitrogen-plasma process for suppression of boron penetration in BF2+-implanted polycrystalline silicon gate

Applied Physics Letters

Volumn 70, Issue 1, 1997, Pages 55-56

  Chao, T S ^a   Chu, C H ^a,b  

^a NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^b Mosel Vitelic Inc   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0343186559     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119304     Document Type: Article

References (12)

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