Transport and optics in quantum wires fabricated by MBE overgrow th on the (110) cleaved edge

Microelectronics Journal

Volumn 28, Issue 8-10, 1997, Pages 817-823

  Pfeiffer, L ^a   Yacoby, A ^a   Stormer, H L ^a   Baldwin, K L ^a   Hasen, J ^a   Pinczuk, A ^a   Wegscheider, W ^a,b   West, K W ^a  

^a LUCENT TECHNOLOGIES   (United States)

^b WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000714769     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0026-2692(96)00120-6     Document Type: Article

References (6)

1. Pfeiffer, L.N., West, K.W., Stormer, H.L., Eisenstein, J.P., Baldwin, K.W., Gershoni, D. and Spector, J., Appl. Phys. Lett., 56 (1990) 1697.
2. Pfeiffer, L.N., Stormer, H.L., Baldwin, K.W., West, K.W., Goni, A.R., Pinczuk, A., Ashoori, R.C., Dignam, M.M. and Wegscheider, W., J. Cryst. Growth, 127 (1993) 849.
3. Wegscheider, W., Pfeiffer, L.N., Dignam, M.M., Pinczuk, A., West, K.W., McCall, S.L. and Hull, R., Phys. Rev. Lett., 71 (1993) 4071.
4. Schubert, E.F., Pfeiffer, L.N., West, K.W., Luftman, H.S. and Zydzik, G.J., Appl. Phys. Lett., 64 (1994) 2238.
5. Sorensen, C.B., Gislason, H., Birkedal, D. and Hvam, J.M. MBE growth and characterization of high purity GaAs/AlGaAs on the (110) surface of GaAs, Microelectronics J., 26 (1995) 767-773.
6. A. Yacoby, H.L. Stormer, K.W. Baldwin, L.N. Pfeiffer and K.W. West, Solid State Commun. (1996).