Factors limiting the composition window for fabrication of SiGe-on-insulator substrate by low-energy oxygen implantation

Thin Solid Films

Volumn 369, Issue 1, 2000, Pages 213-216

  Ishikawa, Y ^a   Shibata, N ^a   Fukatsu, S ^b  

^a JAPAN FINE CERAMICS CENTER   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; COMPOSITION EFFECTS; ENERGY DISPERSIVE SPECTROSCOPY; ION IMPLANTATION; MOLECULAR BEAM EPITAXY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES; THERMODYNAMIC STABILITY; THERMOOXIDATION;

LOW-ENERGY OXYGEN IMPLANTATION; SEPARATION-BY-IMPLANTED OXYGEN (SIMOX);

SEMICONDUCTING FILMS;

EID: 0034228908     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)00809-9     Document Type: Article

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