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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 6 SUPPL. B, 1998, Pages 3793-3795

Scanning tunneling microscopy study on self-formation process of quantum dot structures by the growth of GaP/InP short-period superlattices on GaAs (311)A substrate

(4) Noh, Joo Hyong a Asahi, Hajime a Kim, Seong Jin a Gonda, Shun Ichi a

a OSAKA UNIVERSITY (Japan)

Author keywords

Composition modulation; GaP InP short period superlattices; Gas source MBE; Self formed quantum dot structures; STM; STS

Indexed keywords

MOLECULAR BEAM EPITAXY; MONOLAYERS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR SUPERLATTICES;

SCANNING TUNNELING SPECTROSCOPY; SELF FORMED QUANTUM DOT STRUCTURES; SHORT PERIOD SUPERLATTICES;

SCANNING TUNNELING MICROSCOPY;

EID: 0032093895 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.37.3793 Document Type: Article

Times cited : (4)

References (9)

1
- 0005985335
- D. Leonard, M. Krishnamurthy, C. M. Reaves, S. P. Denbaars and P. M. Petroff: Appl. Phys. Lett. 63 (1993) 3203.
- (1993) Appl. Phys. Lett. , vol.63 , pp. 3203
- Leonard, D.¹ Krishnamurthy, M.² Reaves, C.M.³ Denbaars, S.P.⁴ Petroff, P.M.⁵

2
- 0030080454
- D. Bimberg, N. N. Ledenstov, M. Grundmann, N. Kirstaedter, O.G. Schmidt, M. H. Mao, V. M. Ustinov, A.Y. Egorov, A. Z. Zhukov, P. S. Kopev, Z. I. Alferov, S. S. Ruvimov, GoSele and J. Heydenreich: Jpn. J. Appl. Phys. 35 (1996) 1311.
- (1996) Jpn. J. Appl. Phys. , vol.35 , pp. 1311
- Bimberg, D.¹ Ledenstov, N.N.² Grundmann, M.³ Kirstaedter, N.⁴ Schmidt, O.G.⁵ Mao, M.H.⁶ Ustinov, V.M.⁷ Egorov, A.Y.⁸ Zhukov, A.Z.⁹ Kopev, P.S.¹⁰ Alferov, Z.I.¹¹ Ruvimov, S.S.¹² GoSele¹³ Heydenreich, J.¹⁴

3
- 0030192863
- H. Shoji, Y. Nakata, K. Mukai, Y. Sugiyama, M. Sugawara, N. Yokoyama and H. Ishigawa: Jpn. J. Appl. Phys. 35 (1996) L903.
- (1996) Jpn. J. Appl. Phys. , vol.35
- Shoji, H.¹ Nakata, Y.² Mukai, K.³ Sugiyama, Y.⁴ Sugawara, M.⁵ Yokoyama, N.⁶ Ishigawa, H.⁷

4
- 36449006681
- M. Kitamura, M. Nishioka, J. Oshinowo and Y. Arakawa: Appl. Phys. Lett. 66 (1995) 3663.
- (1995) Appl. Phys. Lett. , vol.66 , pp. 3663
- Kitamura, M.¹ Nishioka, M.² Oshinowo, J.³ Arakawa, Y.⁴

5
- 0031145699
- S.J. Kim, H. Asahi, M. Takemoto, K. Asami, J. H. Noh and S. Gonda : J. Cryst. Growth175/176 (1997) 754.
- (1997) J. Cryst. Growth , vol.175-176 , pp. 754
- Kim, S.J.¹ Asahi, H.² Takemoto, M.³ Asami, K.⁴ Noh, J.H.⁵ Gonda, S.⁶

6
- 0031547181
- S.J. Kim, H. Asahi, M. Takemoto, J. H. Noh, K. Asami and S. Gonda : Appl. Surf. Sci.113/114 (1997) 97.
- (1997) Appl. Surf. Sci. , vol.113-114 , pp. 97
- Kim, S.J.¹ Asahi, H.² Takemoto, M.³ Noh, J.H.⁴ Asami, K.⁵ Gonda, S.⁶

7
- 0030166312
- J. H. Noh, H. Asahi, S.J. Kim, M. Takemoto and S. Gonda: Jpn. J. Appl. Phys. 35(1996) 3743.
- (1996) Jpn. J. Appl. Phys. , vol.35 , pp. 3743
- Noh, J.H.¹ Asahi, H.² Kim, S.J.³ Takemoto, M.⁴ Gonda, S.⁵

8
- 0000654920
- J. H. Noh, H. Asahi, S.J. Kim and S. Gonda: Jpn. J. Appl. Phys. 36 (1997) 3818.
- (1997) Jpn. J. Appl. Phys. , vol.36 , pp. 3818
- Noh, J.H.¹ Asahi, H.² Kim, S.J.³ Gonda, S.⁴

9
- 3342946785
- S.J. Kim, H. Asahi, K. Asami, T. Ishibashi and S. Gonda: Inst. Phys. Conf. Ser. No. 145 (1995) 91.
- (1995) Inst. Phys. Conf. Ser. , vol.145 , pp. 91
- Kim, S.J.¹ Asahi, H.² Asami, K.³ Ishibashi, T.⁴ Gonda, S.⁵

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