Origin, symmetry, and temperature dependence of the perturbation induced by Si extrinsic defects on the Sn/Si(111) α surface: A scanning tunneling microscopy study

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 18, Issue 4 II, 2000, Pages 1946-1949

  Ottaviano, L ^a   Crivellari, M ^b   Profeta, G ^b   Continenza, A ^b   Lozzi, L ^b   Santucci, S ^b  

^a INFM   (Italy)

^b UNIVERSITY OF L'AQUILA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRANSFER; CRYSTAL DEFECTS; SCANNING TUNNELING MICROSCOPY; TIN;

FULL LINEARIZED AUGMENTED PLANE WAVE CALCULATION (FLAPW);

SEMICONDUCTING SILICON;

EID: 0034225710     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.582451     Document Type: Article

References (13)

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13. The RT and LT line averages shown in Fig. 5 do not show a brightness decrease from the third to the fourth coordination shell. This decrease should come out from a picture considering isolated defects. Indeed the proximity of other defects with overlapping effects can perturb this observation.