Comparative analysis of minority carrier transport in npn bipolar transistors with Si, Si1-xGex, and Si1-yCy base layers

Thin Solid Films

Volumn 369, Issue 1, 2000, Pages 347-351

  Heinemann, B ^a   Knoll, D ^a   Fischer, G G ^a   Schley, P ^a   Osten, H J ^a  

^a IHP   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ADDITION REACTIONS; CARRIER CONCENTRATION; CARRIER MOBILITY; COMPOSITION EFFECTS; HETEROJUNCTION BIPOLAR TRANSISTORS; REACTION KINETICS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; THIN FILMS;

MINORITY CARRIER TRANSPORT; TRANSIT TIME ANALYSIS;

SEMICONDUCTING FILMS;

EID: 0034225333     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)00867-1     Document Type: Article

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