Surface morphology of growing Al on Si(111)7×7 and Si(111)√3 × √3-Al substrates by reflection high-energy electron diffraction

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 7 B, 2000, Pages 4374-4375

  Horio, Yoshimi ^a  

^a DAIDO UNIVERSITY   (Japan)

Author keywords

Al; Energy filter; Epitaxial growth; Refraction effect; RHEED; Si(111)7 7; Si(111) 3 3 Al; Surface morphology

Indexed keywords

ALUMINUM; CRYSTALLOGRAPHY; DEPOSITION; EPITAXIAL GROWTH; FILM GROWTH; MORPHOLOGY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; REFRACTION; SILICON; SURFACE STRUCTURE; THIN FILMS;

ENERGY FILTERS;

METALLIC FILMS;

EID: 0034224932     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.4374     Document Type: Article

References (11)

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