Different growth modes of Al on Si(111)7 × 7 and Si(111)√3 × √3-Al surfaces

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 8 B, 1999, Pages 4881-4886

  Horio, Yoshimi ^a  

^a DAIDO UNIVERSITY   (Japan)

Author keywords

Al; Energy filter; Epitaxial growth; RHEED intensity oscillation; Si(111)7 7; Si(111) 3 3 Al

Indexed keywords

ALUMINUM; CRYSTAL ORIENTATION; CRYSTAL SYMMETRY; OSCILLATIONS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING SILICON; SURFACE STRUCTURE;

ENERGY FILTER; ENERGY LOSS THRESHOLD; INTENSITY OSCILLATION; TRANSIENT GROWTH STAGE;

EPITAXIAL GROWTH;

EID: 0033175275     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.4881     Document Type: Article

References (3)

1. J. J. Lander and J. Morrison: Surf. Sci. 2 (1964) 553.
2. I. Yamada, H. Inokawa and T. Takagi: J. Appl. Phys. 56 (1984) 2746.
3. H. Inokawa, I. Yamada and T. Takagi: Jpn. J. Appl. Phys. 24 (1985) L173.